[Flash Self Emulation Settings] tab

2.3.2.3 [Flash Self Emulation Settings] tab

You configure the flash self programming emulation (Code flash).

Note that this tab appears only when the selected microcontroller incorporates the flash memory.

(1)	[Flash Self Emulation]

You can configure the flash self programming emulation function in this category.

Figure 2.15

[Flash Self Emulation] Category

(a)	[Flash self-programming]

Select whether to use the flash self programming emulation function.

Select [Yes] to use the flash self programming emulation function (default: [No]).

(2)	[Writing Time/Erasing Time]

You can configure the delay time for writing to and erasing the flash memory in this category.

Figure 2.16

[Writing Time/Erasing Time] Category

(a)	[Writing time]

You can simulate the delay time for writing to the flash memory.

Select the value to simulate the delay time from the following drop-down list.

No retry	Specifies "0" as the number of times of retry. The delay time is 0 (the writing speed is fastest).
Typical number of times that is assumed by flash macro specifications	Specifies the typical number of times that is assumed by flash macro specifications (default).
Maximum number of times that is assumed by flash macro specifications	Specifies the maximum number of times that is assumed by flash macro specifications.
Retries for the maximum number of times specified	Specifies the maximum number of times of retry. The delay time is maximum (the writing speed is longest).

(b)	[Address for writing time]

Specify the target address at which to simulate the delay time for writing.

Directly enter the address in hexadecimal number from 0x0 to 0xFFFFF (default: [0]).

(c)	[Address mask value for writing time]

Specify a mask value for the address for writing time.

Directly enter the address in hexadecimal number from 0x0 to 0xFFFFF (default: [0x3]).

The address for the writing time is masked bit-wise with a mask value for which "0" is specified.

Caution

The flash library writes to the code flash memory in 4-byte units, so fix the lowest and second-lowest order bits of the address mask to 1.

Example

To set an address for writing time between 0x1000 and 0x1FFF
[Address for writing time]: 0x1000
[Address mask value for writing time]: 0xF003
[Target address]: 0x1000, 0x1004, 0x1008, 0x100C, 0x1010, ..., 0x1ffc

(d)	[Erasing time]

You can simulate the delay time for erasing the flash memory.

Select the value to simulate the delay time from the following drop-down list.

No retry	Specifies "0" as the number of times of retry. The delay time is 0 (the erasing speed is fastest).
Typical number of times that is assumed by flash macro specifications	Specifies the typical number of times that is assumed by flash macro specifications (default).
Maximum number of times that is assumed by flash macro specifications	Specifies the maximum number of times that is assumed by flash macro specifications.
Retries for the maximum number of times specified	Specifies the maximum number of times of retry. The delay time is maximum (the erasing speed is longest).

(e)	[Address for erasing time]

Specify the target address at which to simulate the delay time for erasing.

Directly enter the address in hexadecimal number from 0x0 to 0xFFFFF (default: [0]).

(f)	[Address mask value for erasing time]

Specify a mask value for the address for erasing time.

Directly enter the address in hexadecimal number from 0x0 to 0xFFFFF (default: [0x3FF]).

The address for the writing time is masked bit-wise with a mask value for which "0" is specified.

Caution

The flash library erases the code flash memory in block units, so fix the lower-order 10 bits of the address mask to 1.

Example

To set an address for erasing time between 0x1000 and 0x1FFF
[Address for erasing time]: 0x1000
[Address mask value for erasing time]: 0xF3FF
[Target address]: 0x1000, 0x1400, 0x1800, 0x1C00

(3)	[Macro Service Error]

In this category, you can configure the operation of flash functions in the self programming library, that are used for the flash macro service when performing the flash self programming.

Figure 2.17

[Macro Service Error] Category

(a)	[Macro Service Errors]

Specify the error to generate in the flash macro service to emulate (errors will not be generated during normal emulation).

Three types of errors to generate ([0]/[1]/[2]) can be specified with subproperties for this property.

Select any one of the following types from each of the [Generate error] subproperties to return the error values forcibly.

1) Generate FlashErase Error (Erase)

2) Generate FlashBlankCheck Error (BlankCheck)

3) Generate FlashWrite Error (Write)

4) Generate FlashIVerify Error (IVerify)

5) Generate FlashSetSecurity / FlashSetFSW Error (Erase)

6) Generate FlashSetSecurity / FlashSetFSW Error (Write)

7) Generate FlashSetSecurity / FlashSetFSW Error (IVerify)

If you select one of 1) to 4), furthermore, specify the address within the flash memory and its mask valueNote at which the corresponding error is to be generated, with the [Address for error] and [Address mask value for error] subproperties that are listed newly in the lower area. Directly enter the address in hexadecimal number from 0x0 to 0xFFFFF (default: [0]).

Note

When [Generate FlashWrite Error (Write)] is selected, fix the lowest and second-lowest order bits of the mask value to 1, because the flash library writes to the code flash memory in 4-byte units.
Also, when [Generate FlashErase Error (Erase)], [Generate FlashBlankCheck Error (BlankCheck)] or [Generate FlashIVerify Error (IVerify)] is selected, fix the lower-order 10 bits of the mask value to 1, because erasure of the code flash memory, blank checking, and internal verification proceed in block units.

(4)	[Setting Flash shield window]

You can specify the area that can be written or erased by flash self programming (Flash shield window function), in this category.

Caution

Settings of this category are applied after CPU reset is generated.
If you changed these settings, execute the program after reset the CPU.

Figure 2.18

[Setting Flash shield window] Category

(a)	[Flash shield window start block]

Specify the start block of the area that can be written to and erased by flash self programming.

Directly enter the value in hexadecimal number from 0x0 to 0xFFFF (default: [0]).

(b)	[Flash shield window end block]

Specify the end block of the area that can be written to and erased by flash self programming.

Directly enter the value in hexadecimal number from 0x0 to 0xFFFF (default: [FFFF]).

(5)	[Security Flag Emulation]

You can configure the function on the security flag emulation in this category.

The initial value of the security flag is emulated when the security has been set to the flash memory.

Caution

Settings of this category are applied after CPU reset is generated.
If you changed these settings, execute the program after reset the CPU.

Figure 2.19

[Security Flag Emulation] Category

(a)	[Disable block erase]

Specify whether to emulate to disable block erase.

Select [Yes] to emulate to disable block erase (default: [No]).

(b)	[Disable program]

Select whether to emulate to disable writing.

Select [Yes] to emulate to disable writing (default: [No]).

(c)	[Disable boot block cluster reprogram]

Select whether to emulate to disable rewrite boot area.

Select [Yes] to emulate to disable rewrite boot area (default: [No]).